Si7940DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71845 .
Document Number: 71845
S09-0268-Rev. E, 16-Feb-09
www.vishay.com
5
相关PDF资料
SI7945DP-T1-GE3 MOSFET DL P-CH 30V PPAK 8-SOIC
SI7948DP-T1-GE3 MOSFET N-CH DL 60V PWRPAK 8-SOIC
SI7956DP-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC
SI7958DP-T1-GE3 MOSFET DL N-CH 40V PPAK 8-SOIC
SI7964DP-T1-GE3 MOSFET DUAL N-CH 60V PPAK 8SOIC
SI7994DP-T1-GE3 MOSFET N-CH DL 30V PWRPAK 8-SOIC
SI7997DP-T1-GE3 MOSFET P-CH 30V 8-SOIC
SI7998DP-T1-GE3 MOSFET 2N-CH 30V 25A PPAK 8SOIC
相关代理商/技术参数
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